Invention Grant
- Patent Title: Template forming method, template, and template base material
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Application No.: US14844050Application Date: 2015-09-03
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Publication No.: US09885118B2Publication Date: 2018-02-06
- Inventor: Masatoshi Tsuji , Masayuki Hatano , Yohko Komatsu , Tetsuro Nakasugi
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2015-034019 20150224
- Main IPC: H01L21/027
- IPC: H01L21/027 ; C23F1/16 ; G03F7/00
Abstract:
According to one embodiment, a template forming method is provided. In the template forming method, a template pattern is formed on a first surface of a substrate. A high liquid repellent property portion is formed in a region different from the template pattern on a side of the first surface of the substrate. The high liquid repellent property portion has a higher contacting angle with respect to a resist than a portion without the high liquid repellent property portion formed therein.
Public/Granted literature
- US20160247673A1 TEMPLATE FORMING METHOD, TEMPLATE, AND TEMPLATE BASE MATERIAL Public/Granted day:2016-08-25
Information query
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