Invention Grant
- Patent Title: Substrate inspection apparatus and substrate temperature control method
-
Application No.: US14779856Application Date: 2014-03-18
-
Publication No.: US09885747B2Publication Date: 2018-02-06
- Inventor: Yutaka Akaike , Dai Kobayashi
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Priority: JP2013-062141 20130325; JP2013-201289 20130927
- International Application: PCT/JP2014/058153 WO 20140318
- International Announcement: WO2014/157123 WO 20141002
- Main IPC: G01R15/18
- IPC: G01R15/18 ; G01R27/08 ; G01R31/28 ; H01L21/67 ; G01R1/04 ; G01R31/26

Abstract:
A substrate inspection apparatus includes a mounting table, an inspection unit, a temperature control unit and a medium channel. The mounting table mounts thereon a substrate on which a semiconductor device is formed. The inspection unit inspects electrical characteristics of the semiconductor device on the mounted substrate. The temperature control unit controls a temperature of the mounting table. The medium channel passes through the mounting table. The temperature control unit includes a high-temperature medium supply unit supplies a high-temperature medium to the medium channel, a low-temperature medium supply unit supplies a low-temperature medium to the medium channel and a medium mixing unit mixes the high-temperature medium and the low-temperature medium which are supplied to the medium channel.
Public/Granted literature
- US20160109508A1 HEAT TREATMENT APPARATUS AND HEAT TREATMENT METHOD Public/Granted day:2016-04-21
Information query