In a pattern shape adjustment method according to one embodiment, a correspondence relation between a first shape feature amount of a first on-substrate pattern formed on a first substrate and a first laser band width of laser light as exposure light used when forming the first on-substrate pattern is acquired. Also, a second shape feature amount of a second on-substrate pattern actually formed on a second substrate is measured. Then, a second laser band width according to the shape of a third on-substrate pattern to be formed on a third substrate is calculated based on the correspondence relation and the second shape feature amount. Further, the third substrate is exposed to laser light having the second laser band width.