A semiconductor device may include normal memory cells, redundancy memory cells, a fuse array, and a controller. The normal memory cells may be coupled to a plurality of word lines and bit lines. The redundancy memory cells may be coupled to a plurality of word lines and bit lines, and may replace one or more normal memory cells that are defective. The fuse array may include a redundancy address storage region configured to store addresses of the redundancy memory cells, an error correction information storage region configured to store error correction information for correcting errors of addresses of the redundancy memory cells, stored in the redundancy address storage region, and a weak address storage region configured to store an address of a weak cell among the normal memory cells. The controller may perform a repair operation based on a redundancy address and perform a refresh operation on a weak cell corresponding to the address of the weak cell.