Invention Grant
- Patent Title: Memory cell having a reduced peak wake-up current
-
Application No.: US15360761Application Date: 2016-11-23
-
Publication No.: US09886988B1Publication Date: 2018-02-06
- Inventor: Bing Wang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: G11C7/00
- IPC: G11C7/00 ; G11C7/12

Abstract:
In various embodiments, a circuit includes a first switch coupled to a voltage source and a bit-line (BL). The first switch is configured to couple the BL to the voltage source to charge the BL in response to a charge control signal. A second switch is coupled to the voltage source and a complimentary bit-line (BLB) and is configured to couple the BLB to the voltage source to charge the BLB in response to the charge control signal. A control circuit is electrically coupled to each of the first switch and the second switch. The control circuit is configured to generate the charge control signal. The charge control signal is configured to control the first switch and the second switch to selectively couple the BL and the BLB to the voltage source to charge the BL and the BLB from an initial voltage to a first predetermined voltage during a first discrete charging period and from the first voltage to a second predetermined voltage during a second discrete charging period.
Public/Granted literature
- US3257625A Optical masers comprising the active media srmoo:nd, camoo:nd, and pbmoo:nd Public/Granted day:1966-06-21
Information query