Invention Grant
- Patent Title: Static RAM for differential power analysis resistance
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Application No.: US15437452Application Date: 2017-02-21
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Publication No.: US09886999B2Publication Date: 2018-02-06
- Inventor: Pengjun Wang , Keji Zhou , Weiwei Chen , Yuejun Zhang
- Applicant: Ningbo University
- Applicant Address: CN Zhejiang
- Assignee: Ningbo University
- Current Assignee: Ningbo University
- Current Assignee Address: CN Zhejiang
- Agency: JCIPRNET
- Priority: CN201610099443 20160223
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/419 ; G11C11/418

Abstract:
The present invention discloses a static RAM for defensive differential power consumption analysis, comprising a replica bit-line circuit, a decoder, an address latch circuit, a clock circuit, n-bit memory arrays, n-bit data selectors, n-bit input circuit and n-bit output circuits; the output circuits comprises a sensitivity amplifier and a data latch circuit; the 1st PMOS tube, the 2nd PMOS tube, the 3rd PMOS tube, the 4th PMOS tube, the 5th PMOS tube, the 6th PMOS tube, the 7th PMOS tube, the 1st NMOS tube, the 2nd NMOS tube, the 3rd NMOS tube, the 4th NMOS tube and the 5th NMOS tube constitute the sensitivity amplifier; two NOR gates, the 8th PMOS tube, the 9th PMOS tube, the 10th PMOS tube, the 11th PMOS tube, the 6th NMOS tube, the 7th NMOS tube, the 8th NMOS tube, the 9th NMOS tube and the 10th NMOS tube constitute the data latch circuit; the present invention is characterized in that energy consumption in each working cycle is basically identical, which is provided with higher capability in defense of differential power analysis.
Public/Granted literature
- US20170243636A1 STATIC RAM FOR DIFFERENTIAL POWER ANALYSIS RESISTANCE Public/Granted day:2017-08-24
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