Apparatuses and techniques are described for reducing or eliminating program disturb in non-volatile storage. In one aspect, the ramp rate of a voltage applied to a dummy word line is reduced during programming of edge word lines. In one embodiment, a slower than normal ramp rate is used for a dummy word line when the word line selected for programming is an edge word line, but a normal ramp rate is used for the dummy word line when the word line selected for programming is a middle word line.