Invention Grant
- Patent Title: Doped graphene, method of manufacturing the doped graphene, and a device including the doped graphene
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Application No.: US12847389Application Date: 2010-07-30
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Publication No.: US09887020B2Publication Date: 2018-02-06
- Inventor: Hyeon-jin Shin , Won-mook Choi , Jae-young Choi , Seon-mi Yoon
- Applicant: Hyeon-jin Shin , Won-mook Choi , Jae-young Choi , Seon-mi Yoon
- Applicant Address: KR Gyeonggi Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi Do
- Agency: Cantor Colburn LLP
- Priority: KR10-2009-0118450 20091202
- Main IPC: C01B32/194
- IPC: C01B32/194 ; H01B1/04 ; B82Y30/00 ; B82Y40/00 ; H01L29/16 ; H01L29/167 ; C01B32/184 ; H01L51/00
Abstract:
A composition including graphene; and at least one dopant selected from the group consisting of an organic dopant and an inorganic dopant.
Public/Granted literature
- US20110127471A1 DOPED GRAPHENE, METHOD OF MANUFACTURING THE DOPED GRAPHENE, AND A DEVICE INCLUDING THE DOPED GRAPHENE Public/Granted day:2011-06-02
Information query
