Invention Grant
- Patent Title: Systems and methods for integrated resputtering in a physical vapor deposition chamber
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Application No.: US14162507Application Date: 2014-01-23
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Publication No.: US09887072B2Publication Date: 2018-02-06
- Inventor: Shing-Chyang Pan , Ching-Hua Hsieh , Ming-Hsing Tsai , Syun-Ming Jang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01J37/34
- IPC: H01J37/34 ; C23C14/34 ; C23C14/04 ; C23C14/35 ; C23C14/58

Abstract:
The present disclosure is directed to a material layer deposition system. The material layer deposition system includes a wafer pedestal configured to support at least one wafer within a confinement shield structure and a target carrier structure positioned above the wafer pedestal at an opposite side of the confinement shield structure. The target carrier structure is configured to support a sputtering target. The material layer deposition system further includes a collimator disposed within the confinement shield structure between the wafer pedestal and the target carrier structure, an electrical power source coupled to the collimator to supply electrical power, and a control system configured to control the electrical power source coupled to the collimator.
Public/Granted literature
- US20150206724A1 Systems and Methods for Integrated Resputtering in a Physical Vapor Deposition Chamber Public/Granted day:2015-07-23
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