Invention Grant
- Patent Title: System and method for an etch process with silicon concentration control
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Application No.: US14205665Application Date: 2014-03-12
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Publication No.: US09887095B2Publication Date: 2018-02-06
- Inventor: Fu Yi Chang , Yih-Song Chiu , Shao-Yen Ku
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L21/311 ; H01L21/67 ; H01L21/762
Abstract:
The present disclosure provides one embodiment of an etch system. The etch system includes a tank designed to hold an etch solution for etching; a silicon monitor configured to measure silicon concentration of the etch solution; a drain module coupled to the tank and being operable to drain the etch solution; and a supply module being operable to fill in the tank with a fresh etch solution.
Public/Granted literature
- US20140273303A1 System and Method for an Etch Process with Silicon Concentration Control Public/Granted day:2014-09-18
Information query
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