Invention Grant
- Patent Title: Pattern forming method capable of minimizing deviation of an inversion pattern
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Application No.: US15340508Application Date: 2016-11-01
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Publication No.: US09887099B2Publication Date: 2018-02-06
- Inventor: Hiroyuki Nagai
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2015-216524 20151104
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/02
Abstract:
A method includes: forming a metal oxide film on a substrate including an etching target film and a metal pattern formed thereon, and forming an oxide film having a relatively strong oxygen bond on the metal pattern; performing a reduction treatment such that the metal oxide film formed on the metal pattern is defined as a first metal-containing film and the metal oxide film formed on the etching target film is defined as a second metal-containing film whose surface is reduced into metal; selectively forming a metal film on only the second metal-containing film formed on the etching target film, the metal film having such a property that it is easy to be formed on metal and is hard to be formed on an oxide; and obtaining an inversion pattern composed of the inversion material by etching away the metal pattern and leaving the inversion material and the metal film.
Public/Granted literature
- US20170125262A1 PATTERN FORMING METHOD Public/Granted day:2017-05-04
Information query
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