Invention Grant
- Patent Title: Method for manufacturing semiconductor device
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Application No.: US14912509Application Date: 2014-07-08
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Publication No.: US09887101B2Publication Date: 2018-02-06
- Inventor: Ryosuke Kubota , So Tanaka
- Applicant: Sumitomo Electric Industries, Ltd.
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agency: IPUSA, PLLC
- Priority: JP2013-171239 20130821
- International Application: PCT/JP2014/068134 WO 20140708
- International Announcement: WO2015/025628 WO 20150226
- Main IPC: H01L21/425
- IPC: H01L21/425 ; H01L21/324 ; H01L21/02 ; H01L21/225 ; H01L21/683 ; H01L21/04 ; H01L21/265 ; H01L21/67
Abstract:
A method for manufacturing a semiconductor device in accordance with the present invention includes the steps of preparing a semiconductor substrate, placing the semiconductor substrate on an electrostatic chuck, chucking the semiconductor substrate after raising a temperature of the electrostatic chuck to a first temperature, raising a temperature of the electrostatic chuck to a second temperature which is higher than the above-described first temperature in a state where the semiconductor substrate is chucked, and performing a treatment to the semiconductor substrate in a state where a temperature of the electrostatic chuck is maintained at the above-described second temperature.
Public/Granted literature
- US20160204000A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2016-07-14
Information query
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