Invention Grant
- Patent Title: Semiconductor devices, methods of manufacture thereof, and methods of singulating semiconductor devices
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Application No.: US15170390Application Date: 2016-06-01
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Publication No.: US09887134B2Publication Date: 2018-02-06
- Inventor: Yao-Wen Chang , Jian-Shiou Huang , Cheng-Yuan Tsai , Kong-Beng Thei
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/683 ; H01L21/02 ; H01L21/3105 ; H01L21/768 ; H01L23/29 ; H01L23/31 ; H01L23/00
Abstract:
Semiconductor devices, methods of manufacture thereof, and methods of singulating semiconductor devices are disclosed. In some embodiments, a method of manufacturing a semiconductor device includes forming a trench in a substrate, the trench being formed within a first side of the substrate and disposed around a portion of the substrate. A first insulating material is formed over the first side of the substrate and the trench, and a second insulating material is formed over the first insulating material. Apertures are formed in the second insulating material and the first insulating material over the portion of the substrate. Features are formed in the apertures, and a carrier is coupled to the features and the second insulating material. A second side of the substrate is planarized, the second side of the substrate being opposite the first side of the substrate. The second insulating material is removed, and the carrier is removed.
Public/Granted literature
- US20170229346A1 Semiconductor Devices, Methods of Manufacture Thereof, and Methods of Singulating Semiconductor Devices Public/Granted day:2017-08-10
Information query
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