Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the semiconductor device
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Application No.: US14678369Application Date: 2015-04-03
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Publication No.: US09887154B2Publication Date: 2018-02-06
- Inventor: Takuya Takahashi , Yoshitaka Otsubo
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2014-087648 20140421; JP2014-255991 20141218
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/053 ; H01L23/10 ; H01L23/40 ; H01L23/04 ; H01L23/373 ; H01L23/00

Abstract:
A semiconductor device includes an insulating substrate including a substrate, a metal pattern formed on an upper surface of the substrate, and a metal film formed on a lower surface of the substrate, a semiconductor element fixed on the metal pattern, a case surrounding the metal pattern and having a contact portion maintained in contact with the upper surface of the substrate, and an adhesive with which the case and a portion of the upper surface of the substrate outside a portion maintained in contact with the contact portion are bonded together, wherein a plurality of through holes are formed in a peripheral portion of the case, the through holes extending vertically through the case, and wherein the metal film exists in at least part of a place right below the contact portion.
Public/Granted literature
- US20150303126A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE Public/Granted day:2015-10-22
Information query
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