Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US14151535Application Date: 2014-01-09
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Publication No.: US09887157B2Publication Date: 2018-02-06
- Inventor: Hyun Ho Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0099068 20130821
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L23/528 ; H01L23/522 ; H01L27/11575
Abstract:
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate on which a contact region and a cell region are defined, sub-patterns formed in the contact region, on the substrate, and insulating patterns and conductive patterns stacked alternately along the sub-patterns.
Public/Granted literature
- US20150054171A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-02-26
Information query
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