Invention Grant
- Patent Title: Integrated circuits with resistors
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Application No.: US14887877Application Date: 2015-10-20
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Publication No.: US09887189B2Publication Date: 2018-02-06
- Inventor: Chan-Hong Chern , Fu-Lung Hsueh
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L49/02 ; H01L29/49 ; H01L27/12 ; H01L29/423

Abstract:
An integrated circuit includes transistor and resistor. The transistor includes a gate stack. The gate stack includes a first dielectric layer, a first conductive layer over the first dielectric layer, a second conductive layer over the first conductive layer, and a second dielectric layer over the second conductive layer. The transistor also includes source/drain (S/D) regions adjacent to the gate stack. The resistor adjacent to the transistor, and includes a third dielectric layer.
Public/Granted literature
- US20160043071A1 INTEGRATED CIRCUITS WITH RESISTORS Public/Granted day:2016-02-11
Information query
IPC分类: