A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a fin which comprises long sides and a first short side, a first trench which is immediately adjacent the first short side of the fin and has a first depth, a second trench which is immediately adjacent the first trench and has a second depth greater than the first depth, a first protrusion structure which protrudes from a bottom of the first trench and extends side by side with the first short side, and a gate which is formed on the first protrusion structure to extend side by side with the first short side.