Invention Grant
- Patent Title: FinFET including tunable fin height and tunable fin width ratio
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Application No.: US14583842Application Date: 2014-12-29
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Publication No.: US09887196B2Publication Date: 2018-02-06
- Inventor: Xiuyu Cai , Qing Liu , Ruilong Xie , Chun-chen Yeh
- Applicant: International Business Machines Corporation , GlobalFoundries, Inc. , STMicroelectronics, Inc.
- Applicant Address: US NY Armonk KY Grand Cayman US TX Coppell
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.,STMICROELECTRONICS, INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.,STMICROELECTRONICS, INC.
- Current Assignee Address: US NY Armonk KY Grand Cayman US TX Coppell
- Agency: Cantor Colburn LLP
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/10 ; H01L27/12 ; H01L21/84 ; H01L29/165 ; H01L21/308 ; H01L21/8238 ; H01L29/16 ; H01L29/06 ; H01L21/033 ; H01L29/78
Abstract:
A semiconductor substrate includes a bulk substrate layer that extends along a first axis to define a width and a second axis perpendicular to the first axis to define a height. A plurality of hetero semiconductor fins includes an epitaxial material formed on a first region of the bulk substrate layer. A plurality of non-hetero semiconductor fins is formed on a second region of the bulk substrate layer different from the first region. The non-hetero semiconductor fins are integrally formed from the bulk substrate layer such that the material of the non-hetero semiconductor fins is different from the epitaxial material.
Public/Granted literature
- US20150287648A1 FINFET INCLUDING TUNABLE FIN HEIGHT AND TUNABLE FIN WIDTH RATIO Public/Granted day:2015-10-08
Information query
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