A semiconductor structure is provided that includes a substrate comprising a first semiconductor material having a first crystallographic orientation and a first device region and a second device region. First vertically stacked and suspended nanosheets of semiconductor channel material of the first crystallographic orientation are located above the substrate and within the first device region. Second vertically stacked and suspended nanosheets of semiconductor channel material of a second crystallographic orientation are located above the substrate and within the second device region. In accordance with the present application, the second crystallographic orientation is different from the first crystallographic orientation.