Invention Grant
- Patent Title: Semiconductor devices including a peripheral circuit region and first and second memory regions, and related programming methods
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Application No.: US14670667Application Date: 2015-03-27
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Publication No.: US09887199B2Publication Date: 2018-02-06
- Inventor: Joon-Sung Lim , Jang-Gn Yun , Hoosung Cho
- Applicant: Joon-Sung Lim , Jang-Gn Yun , Hoosung Cho
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2014-0061018 20140521
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L27/105 ; H01L27/06 ; H01L27/11524 ; H01L27/11582 ; G11C5/02 ; G11C11/56 ; G11C16/04 ; G11C16/10
Abstract:
Semiconductor devices are provided. A semiconductor device includes a peripheral circuit region and a first memory region that are side by side on a substrate. Moreover, the semiconductor device includes a second memory region that is on the peripheral circuit region and the first memory region. Related methods of programming semiconductor devices are also provided.
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