In one embodiment, a capacitor structure includes a substrate, a dielectric stack, a first conductor segment, a second conductor segment and a shielding conductor segment. The dielectric stack is formed on the substrate. A first layer of the dielectric stack includes a plurality of conductor segments routed only in a first direction. A first conductor segment among the multiple conductor segments may be biased to a first voltage. The second conductor segment among the multiple conductor segments may be biased to a second voltage. The shielding conductor segment may be biased to the second voltage and is formed at an end of the first conductor segment. In addition to that, the capacitances for the capacitor structure may be adjusted while the footprint of the capacitor structure is fixed.