Invention Grant
- Patent Title: MOSFET with ultra low drain leakage
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Application No.: US15292747Application Date: 2016-10-13
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Publication No.: US09887265B2Publication Date: 2018-02-06
- Inventor: Joel P. de Souza , Keith E. Fogel , Jeehwan Kim , Devendra K. Sadana
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Louis J. Percello
- Main IPC: H01L29/08
- IPC: H01L29/08 ; H01L29/06 ; H01L29/22 ; H01L29/24 ; H01L29/26 ; H01L29/78 ; H01L23/31 ; H01L29/786 ; H01L21/02 ; H01L29/267 ; H01L29/66 ; H01L21/28 ; H01L29/423 ; H01L23/29
Abstract:
A semiconductor device includes a monocrystalline substrate configured to form a channel region between two recesses in the substrate. A gate conductor is formed on a passivation layer over the channel region. Dielectric pads are formed in a bottom of the recesses and configured to prevent leakage to the substrate. Source and drain regions are formed in the recesses on the dielectric pads from a deposited non-crystalline n-type material with the source and drain regions making contact with the channel region.
Public/Granted literature
- US20170033180A1 MOSFET WITH ULTRA LOW DRAIN LEAKAGE Public/Granted day:2017-02-02
Information query
IPC分类:
