- Patent Title: Method for forming counterdoped semiconductor device comprising first epitaxial layer and second epitaxial layer formed over first epitaxial layer having conductivity type different than second epitaxial layer
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Application No.: US14983722Application Date: 2015-12-30
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Publication No.: US09887272B2Publication Date: 2018-02-06
- Inventor: Richard Kenneth Oxland , Martin Christopher Holland , Krishna Kumar Bhuwalka
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee Address: TW
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/306 ; H01L29/66 ; H01L29/78 ; H01L21/3065
Abstract:
A semiconductor device includes a first type region including a first conductivity type. The semiconductor device includes a second type region including a second conductivity type. The semiconductor device includes a third type region including a third conductivity type that is opposite the first conductivity type, the third type region covering the first type region. The semiconductor device includes a fourth type region including a fourth conductivity type that is opposite the second conductivity type, the fourth type region covering the second type region. The semiconductor device includes a channel region extending between the third type region and the fourth type region.
Public/Granted literature
- US20160118475A1 COUNTERDOPED SEMICONDUCTOR DEVICE Public/Granted day:2016-04-28
Information query
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