- Patent Title: Semiconductor device comprising oxide semiconductor layer in which thickness of the oxide semiconductor layer is greater than or equal to width of the oxide semiconductor layer
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Application No.: US14484942Application Date: 2014-09-12
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Publication No.: US09887297B2Publication Date: 2018-02-06
- Inventor: Tetsuhiro Tanaka , Hiromichi Godo
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2013-191505 20130917
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/49 ; H01L29/04 ; H01L21/477 ; H01L21/02 ; H01L29/51 ; H01L27/12
Abstract:
A semiconductor device includes a gate electrode having higher Gibbs free energy for oxidation than a gate insulating film. An oxide semiconductor layer having a fin shape is formed over an insulating surface, a gate insulating film is formed over the oxide semiconductor layer, a gate electrode including an oxide layer and facing top and side surfaces of the oxide semiconductor layer with the gate insulating film located therebetween is formed, and then by performing heat treatment, a gate electrode is reduced and oxygen is supplied to the oxide semiconductor layer through the gate insulating film.
Public/Granted literature
- US20150076496A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2015-03-19
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