Invention Grant
- Patent Title: Deposition of LiCoO2
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Application No.: US14136842Application Date: 2013-12-20
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Publication No.: US09887414B2Publication Date: 2018-02-06
- Inventor: Hongmei Zhang , R. Ernest Demaray
- Applicant: Hongmei Zhang , R. Ernest Demaray
- Applicant Address: US CA Portola Valley
- Assignee: DEMARAY, LLC
- Current Assignee: DEMARAY, LLC
- Current Assignee Address: US CA Portola Valley
- Agency: Haynes and Boone, LLP
- Main IPC: C23C14/35
- IPC: C23C14/35 ; H01M4/04 ; C23C14/08 ; C23C14/58 ; H01M4/131 ; H01M4/1391 ; H01M4/525 ; H01M4/66 ; H01M6/18 ; H01M6/46 ; H01M10/052 ; H01M10/0562 ; H01M10/0585 ; H01M4/02

Abstract:
In accordance with the present invention, deposition of LiCoO2 layers in a pulsed-dc physical vapor deposition process is presented. Such a deposition can provide a low-temperature, high deposition rate deposition of a crystalline layer of LiCoO2 with a desired or orientation. Some embodiments of the deposition address the need for high rate deposition of LiCoO2 films, which can be utilized as the cathode layer in a solid state rechargeable Li battery. Embodiments of the process according to the present invention can eliminate the high temperature (>700° C.) anneal step that is conventionally needed to crystallize the LiCoO2 layer.
Public/Granted literature
- US20140102878A1 DEPOSITION OF LiCoO2 Public/Granted day:2014-04-17
Information query
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