Invention Grant
- Patent Title: Method for manufacturing wiring structure, copper displacement plating solution, and wiring structure
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Application No.: US14865143Application Date: 2015-09-25
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Publication No.: US09888585B2Publication Date: 2018-02-06
- Inventor: Shoso Shinguhara , Kohei Ota , Mitsuaki Iwashita , Nobutaka Mizutani
- Applicant: Tokyo Electron Limited , A School Corporation Kansai University
- Applicant Address: JP Tokyo JP Osaka
- Assignee: TOKYO ELECTRON LIMITED,A SCHOOL CORPORATION KANSAI UNIVERSITY
- Current Assignee: TOKYO ELECTRON LIMITED,A SCHOOL CORPORATION KANSAI UNIVERSITY
- Current Assignee Address: JP Tokyo JP Osaka
- Agency: Pearne & Gordon LLP
- Priority: JP2014-199299 20140929
- Main IPC: H05K3/00
- IPC: H05K3/00 ; H05K3/42 ; H05K1/03 ; H05K3/24

Abstract:
Adhesion of an underlying diffusion barrier metal film and an electroless copper plating film with respect to an insulating film can be improved. A method for manufacturing a wiring structure includes a process of forming the underlying diffusion barrier metal film 5, including a base metal with respect to copper, on the insulating film 1; and a process of forming the electroless copper plating film 6 on the underlying diffusion barrier metal film 5 by performing an electroless copper displacement plating process with a copper displacement plating solution. The copper displacement plating solution is an acidic copper displacement plating solution of pH1 to pH4, in which copper ions are contained but a reducing agent for reducing the copper ions is not contained.
Public/Granted literature
- US20160095228A1 METHOD FOR MANUFACTURING WIRING STRUCTURE, COPPER DISPLACEMENT PLATING SOLUTION, AND WIRING STRUCTURE Public/Granted day:2016-03-31
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