Invention Grant
- Patent Title: Method for recovering and purifying argon gas from silicon single crystal manufacturing apparatus and apparatus for recovering and purifying argon gas
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Application No.: US15109380Application Date: 2015-01-14
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Publication No.: US09890044B2Publication Date: 2018-02-13
- Inventor: Hideaki Matsushima , Ichiro Onozawa , Wataru Yajima
- Applicant: SHIN-ETSU HANDOTAI CO., LTD.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU HANDOTAI CO., LTD.
- Current Assignee: SHIN-ETSU HANDOTAI CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2014-014391 20140129
- International Application: PCT/JP2015/000128 WO 20150114
- International Announcement: WO2015/115031 WO 20150806
- Main IPC: C01B23/00
- IPC: C01B23/00 ; B01D53/26 ; B01D53/62 ; B01D53/75 ; B01D53/86 ; B01D53/04 ; B01D53/047

Abstract:
An argon gas recovering and purifying method including: introducing waste argon gas containing nitrogen, oxygen, and carbon monoxide from silicon single crystal manufacturing apparatus into waste argon gas storage tank; removing solid matters in pretreatment facility which removes the solid matters in waste argon gas; converting oxygen into water and converting carbon monoxide into carbon dioxide by catalytic reaction; removing the water, the carbon dioxide, and the nitrogen to obtain recovered gas, in the argon gas recovering and purifying method and an argon gas recovering and purifying apparatus, the catalytic reaction is carried out with compression heat alone by arranging a catalyst in a two-stage compressor, and the water is removed by a dryer in advance and then the nitrogen and the carbon dioxide are adsorbed and removed in an ordinary-temperature adsorption tower at the step of obtaining the recovered gas.
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