Invention Grant
- Patent Title: Process for unitary graphene layer or graphene single crystal
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Application No.: US15354706Application Date: 2016-11-17
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Publication No.: US09890469B2Publication Date: 2018-02-13
- Inventor: Aruna Zhamu , Wei Xiong , Bor Z. Jang
- Applicant: Aruna Zhamu , Wei Xiong , Bor Z. Jang
- Applicant Address: US OH Dayton
- Assignee: Nanotek Instruments, Inc.
- Current Assignee: Nanotek Instruments, Inc.
- Current Assignee Address: US OH Dayton
- Main IPC: C30B1/02
- IPC: C30B1/02 ; C30B29/02 ; C30B5/00 ; C30B29/68 ; C01B32/22 ; C01B32/225 ; C01B32/23 ; C01B32/182 ; C01B32/184 ; C01B32/19 ; C01B32/192 ; B82Y30/00 ; B82Y40/00

Abstract:
A unitary graphene layer or graphene single crystal containing closely packed and chemically bonded parallel graphene planes having an inter-graphene plane spacing of 0.335 to 0.40 nm and an oxygen content of 0.01% to 10% by weight, which unitary graphene layer or graphene single crystal is obtained from heat-treating a graphene oxide gel at a temperature higher than 100° C., wherein the average mis-orientation angle between two graphene planes is less than 10 degrees, more typically less than 5 degrees. The molecules in the graphene oxide gel, upon drying and heat-treating, are chemically interconnected and integrated into a unitary graphene entity containing no discrete graphite flake or graphene platelet. This graphene monolith exhibits a combination of exceptional thermal conductivity, electrical conductivity, mechanical strength, surface smoothness, surface hardness, and scratch resistance unmatched by any thin-film material of comparable thickness range.
Public/Granted literature
- US20170073834A1 Process for Unitary Graphene Layer or Graphene Single Crystal Public/Granted day:2017-03-16
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