Invention Grant
- Patent Title: Temperature sensor
-
Application No.: US14431687Application Date: 2013-09-17
-
Publication No.: US09891117B2Publication Date: 2018-02-13
- Inventor: Hitoshi Inaba , Noriaki Nagatomo
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Priority: JP2012-216186 20120928
- International Application: PCT/JP2013/075959 WO 20130917
- International Announcement: WO2014/050916 WO 20140403
- Main IPC: H01C7/10
- IPC: H01C7/10 ; G01K7/22 ; H01C1/142 ; H01C1/148 ; H01C7/04

Abstract:
The temperature sensor includes an insulating film; a thin film thermistor portion which is formed on the surface of the insulating film with a thermistor material of TiAlN; the pair of interdigitated electrodes which have a plurality of comb portions and are pattern-formed on the thin film thermistor portion using a metal so as to face each other; and the pair of pattern electrodes which are pattern-formed on the surface of the insulating film and are connected to the pair of interdigitated electrodes, wherein at least a part of each of the pattern electrodes is formed of a conductive resin.
Public/Granted literature
- US20150260586A1 TEMPERATURE SENSOR Public/Granted day:2015-09-17
Information query