Invention Grant
- Patent Title: Sensing element for semiconductor
-
Application No.: US13918842Application Date: 2013-06-14
-
Publication No.: US09891640B2Publication Date: 2018-02-13
- Inventor: Stefan Willkofer , Andreas Kiep
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; G05F1/46 ; H01L23/34 ; H01L29/739 ; H01L27/06 ; H02M1/32
Abstract:
An embodiment relates to a device comprising a high-side semiconductor, a low-side semiconductor, a first sensing element arranged adjacent to the high-side semiconductor. The first sensing element is isolated from the high-side semiconductor and the first sensing element is directly connectable to a processing device.
Public/Granted literature
- US20140368258A1 SENSING ELEMENT FOR SEMICONDUCTOR Public/Granted day:2014-12-18
Information query
IPC分类:
