Invention Grant
- Patent Title: Overhang hardmask to prevent parasitic epitaxial nodules at gate end during source drain epitaxy
-
Application No.: US15267357Application Date: 2016-09-16
-
Publication No.: US09892925B2Publication Date: 2018-02-13
- Inventor: Kangguo Cheng , Pouya Hashemi , Shogo Mochizuki , Alexander Reznicek
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/66 ; H01L29/423 ; H01L29/49 ; H01L21/3213
Abstract:
A method of making a semiconductor device includes forming a gate covered by a hard mask over a substrate; disposing a mask over the gate and the hard mask; patterning the mask to expose a portion of the gate and the hard mask; cutting the gate and hard mask to form two shorter gates, each of the two shorter gates having an exposed end portion; undercutting the exposed end portion of at least one of the two shorter gates to form an overhanging hard mask portion over the exposed end portion; and forming spacers along a gate sidewall and beneath the overhanging hard mask portion.
Public/Granted literature
- US20170053805A1 OVERHANG HARDMASK TO PREVENT PARASITIC EPITAXIAL NODULES AT GATE END DURING SOURCE DRAIN EPITAXY Public/Granted day:2017-02-23
Information query
IPC分类:
