Invention Grant
- Patent Title: Semiconductor manufacturing method and semiconductor device
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Application No.: US15266746Application Date: 2016-09-15
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Publication No.: US09892929B2Publication Date: 2018-02-13
- Inventor: Yumi Tanaka
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H01L29/792
- IPC: H01L29/792 ; H01L21/28 ; H01L27/1157 ; H01L27/11582 ; H01L27/11563 ; H01L29/423 ; H01L29/66 ; H01L27/11565
Abstract:
A semiconductor manufacturing method includes forming a first film on an upper surface of a substrate. The semiconductor manufacturing method includes forming concave portions extending from an upper surface of the first film to below the upper surface of the substrate. The method includes forming a second film from bottom surfaces of the concave portions to a first position in the concave portions between the upper surface of the first film and the upper surface of the substrate. The method includes forming a third film in the concave portions to cover side walls of the concave portions and an upper surface of the second film. The method includes grinding the third film to expose the second film. The method includes removing the second film. The method includes forming a fourth film from the bottom surfaces of the concave portions to at least a lower surface of the third film.
Public/Granted literature
- US20170250085A1 SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE Public/Granted day:2017-08-31
Information query
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