Invention Grant
- Patent Title: Method for removing halogen and method for manufacturing semiconductor device
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Application No.: US15245335Application Date: 2016-08-24
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Publication No.: US09892934B2Publication Date: 2018-02-13
- Inventor: Ryuichi Asako
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2015-170873 20150831
- Main IPC: H01L21/321
- IPC: H01L21/321 ; H01L21/3213 ; H01L21/3105
Abstract:
A method of removing a halogen includes performing a heating treatment on a halogen-containing film at a pressure higher than 1 atm and a temperature higher than 100 degrees C. in order to suppress a deterioration of the halogen-containing film while keeping an organic solvent, which is in a liquid phase and exhibits a polarity, in contact with a surface of the halogen-containing film.
Public/Granted literature
- US20170062237A1 METHOD FOR REMOVING HALOGEN AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2017-03-02
Information query
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