Invention Grant
- Patent Title: Semiconductor device structure and method for forming the same
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Application No.: US14659170Application Date: 2015-03-16
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Publication No.: US09892957B2Publication Date: 2018-02-13
- Inventor: Wei-Ting Chen , Che-Cheng Chang , Chen-Hsiang Lu , Yu-Cheng Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/311 ; H01L23/532
Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes a substrate and a first dielectric layer over the substrate. The semiconductor device structure includes a second dielectric layer over the first dielectric layer. The first dielectric layer and the second dielectric layer are made of different materials. The semiconductor device structure includes a conductive via structure passing through the first dielectric layer and penetrating into the second dielectric layer. The conductive via structure has a first portion and a second portion. The first portion and the second portion are in the first dielectric layer and the second dielectric layer respectively. The first portion has a first end portion facing the substrate. A first width of the first end portion is greater than a second width of the second portion.
Public/Granted literature
- US20160276272A1 SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME Public/Granted day:2016-09-22
Information query
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