- Patent Title: Cu wiring manufacturing method and Cu wiring manufacturing system
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Application No.: US15416943Application Date: 2017-01-26
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Publication No.: US09892965B2Publication Date: 2018-02-13
- Inventor: Kenji Matsumoto
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Priority: JP2016-013283 20160127
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/768 ; H01L23/522 ; H01L23/532 ; C23C16/40 ; C23C16/455 ; C23C16/56
Abstract:
In a Cu wiring manufacturing method for manufacturing Cu wiring that fills a recess formed in a predetermined pattern on a surface of an interlayer insulating film of a substrate, a MnOx film that becomes a self-formed barrier film by reaction with the interlayer insulating film is formed at least on a surface of the recess by ALD. A CuOx film that becomes a liner film is formed on a surface of the MnOx film by CVD or ALD. An annealing process is performed on the substrate on which the CuOx film is formed and the CuOx film is reduced to a Cu film by oxidation-reduction reaction between the MnOx film and the CuOx film. A Cu-based film is formed on the Cu film obtained by reducing the CuOx film by PVD to fill the Cu-based film in the recess.
Public/Granted literature
- US20170213763A1 Cu WIRING MANUFACTURING METHOD AND Cu WIRING MANUFACTURING SYSTEM Public/Granted day:2017-07-27
Information query
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