Invention Grant
- Patent Title: Semiconductor device having a diverse shaped columnar portion
-
Application No.: US15207410Application Date: 2016-07-11
-
Publication No.: US09893080B2Publication Date: 2018-02-13
- Inventor: Muneyuki Tsuda
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L29/06 ; H01L27/11582

Abstract:
A surface area of a transverse cross section of an upper portion of a columnar portion is greater than a surface area of a transverse cross section of a lower portion of the columnar portion. A configuration of the transverse cross section of the upper portion is a triangle or a pseudo-triangle having three corners, or a quadrilateral or a pseudo-quadrilateral having four corners. A configuration of the transverse cross section of the lower portion is substantially a circle. The upper portion of the columnar portion is adjacent to an upper layer portion of a stacked body including a control gate of an uppermost layer of control gates. The lower portion of the columnar portion is adjacent to a lower layer portion of the stacked body including a control gate of a lowermost layer of the control gates.
Public/Granted literature
- US20170256560A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-09-07
Information query
IPC分类: