Invention Grant
- Patent Title: LTPS array substrate and method for producing the same
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Application No.: US14762458Application Date: 2015-06-17
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Publication No.: US09893097B2Publication Date: 2018-02-13
- Inventor: Cong Wang , Peng Du
- Applicant: Shenzhen China Star Optoelectronics Technology Co., Ltd. , Wuhan China Star Optoelectronics Technology Co., Ltd.
- Applicant Address: CN Shenzhen, Guangdong CN Wuhan, Hubei
- Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.,Wuhan China Star Optoelectronics Technology Co., Ltd
- Current Assignee: Shenzhen China Star Optoelectronics Technology Co., Ltd.,Wuhan China Star Optoelectronics Technology Co., Ltd
- Current Assignee Address: CN Shenzhen, Guangdong CN Wuhan, Hubei
- Agent Andrew C. Cheng
- Priority: CN201510310280 20150608
- International Application: PCT/CN2015/081635 WO 20150617
- International Announcement: WO2016/197400 WO 20161215
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/66 ; H01L29/786

Abstract:
An LTPS array substrate and a method for producing the same are proposed. The method includes: forming a gate of a thin-film transistor (TFT) of the LTPS array substrate on a substrate; forming a first insulating layer, a semiconductor layer, and a positive photoresist layer on the substrate one by one; exposing one side of the substrate on the opposite side of the gate for forming a polycrystalline silicon layer; forming a second insulating layer on the substrate of the polycrystalline silicon layer; forming a source and a drain of the TFT on the second insulating layer so that the source and the drain is electrically connected to the polycrystalline silicon layer via a contact hole. The use of masks in types and in numbers in the LTPS technology will be reduced. So, both of the processes and the production costs are reduced.
Public/Granted literature
- US20170141139A1 LTPS ARRAY SUBSTRATE AND METHOD FOR PRODUCING THE SAME Public/Granted day:2017-05-18
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