Invention Grant
- Patent Title: Manufacturing method of electronic device and manufacturing method of semiconductor device
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Application No.: US14657272Application Date: 2015-03-13
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Publication No.: US09893116B2Publication Date: 2018-02-13
- Inventor: Shinya Takyu , Hideo Numata , Hiroyuki Okura
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Minato-ku
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2014-188282 20140916
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L21/306 ; H01L21/304

Abstract:
A manufacturing method of an electronic device processes a surface of a first wafer, bonds a surface of a second wafer to the processed surface of the first wafer, thins the first wafer by polishing a back surface of the first wafer, the back surface being located on an opposite side of the processed surface, forms a groove along a periphery of the back surface of the thinned first wafer by using a dicing blade, attaches a protective layer to the back surface of the first wafer having the groove, via a bonding layer, and polishes a back surface of the second wafer, the back surface being located on an opposite side of the surface attached to the protective layer.
Public/Granted literature
- US20160079303A1 MANUFACTURING METHOD OF ELECTRONIC DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2016-03-17
Information query
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