Invention Grant
- Patent Title: Method for manufacturing a solar cell with a surface-passivating dielectric double layer, and corresponding solar cell
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Application No.: US12742818Application Date: 2008-11-06
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Publication No.: US09893215B2Publication Date: 2018-02-13
- Inventor: Jan Schmidt , Bram Hoex
- Applicant: Jan Schmidt , Bram Hoex
- Applicant Address: KY Grand Cayman DE Bonn
- Assignee: HANWHA Q CELLS CO., LTD,SOLARWORLD INDUSTRIES GMBH
- Current Assignee: HANWHA Q CELLS CO., LTD,SOLARWORLD INDUSTRIES GMBH
- Current Assignee Address: KY Grand Cayman DE Bonn
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: DE102007054384 20071114
- International Application: PCT/EP2008/065067 WO 20081106
- International Announcement: WO2009/062882 WO 20090522
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0256 ; H01L31/0216 ; C23C16/40 ; C23C16/455

Abstract:
A solar cell with a dielectric double layer and also a method for the manufacture thereof are described. A first dielectric layer (3), which contains aluminum oxide or consists of aluminum oxide, and a second, hydrogen-containing dielectric layer (5) are produced by means of atomic layer deposition, allowing very good passivation of the surface of solar cells to be achieved.
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