Invention Grant
- Patent Title: Non-polar (Al,B,In,Ga)N quantum wells
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Application No.: US14921734Application Date: 2015-10-23
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Publication No.: US09893236B2Publication Date: 2018-02-13
- Inventor: Michael D. Craven , Steven P. DenBaars
- Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Applicant Address: US CA Oakland JP Kawaguchi
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA,JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA,JAPAN SCIENCE AND TECHNOLOGY AGENCY
- Current Assignee Address: US CA Oakland JP Kawaguchi
- Agency: Gates & Cooper LLP
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/24 ; C30B25/02 ; C30B25/04 ; C30B25/10 ; C30B25/18 ; C30B29/40 ; C30B29/60 ; H01L21/02 ; H01L29/15 ; H01L33/06 ; H01L33/32 ; H01L29/20
Abstract:
A method of fabricating non-polar a-plane GaN/(Al,B,In,Ga)N multiple quantum wells (MQWs). The a-plane MQWs are grown on the appropriate GaN/sapphire template layers via metalorganic chemical vapor deposition (MOCVD) with well widths ranging from 20 Å to 70 Å. The room temperature photoluminescence (PL) emission energy from the a-plane MQWs followed a square well trend modeled using self-consistent Poisson-Schrodinger (SCPS) calculations. Optimal PL emission intensity is obtained at a quantum well width of 52 Å for the a-plane MQWs.
Public/Granted literature
- US20160043278A1 NON-POLAR (Al,B,In,Ga)N QUANTUM WELLS Public/Granted day:2016-02-11
Information query
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