Invention Grant
- Patent Title: Switching element, switching element manufacturing method, semiconductor device, and semiconductor device manufacturing method
-
Application No.: US14895017Application Date: 2014-06-17
-
Publication No.: US09893276B2Publication Date: 2018-02-13
- Inventor: Naoki Banno , Munehiro Tada
- Applicant: NEC CORPORATION
- Applicant Address: JP Minato-ku, Tokyo
- Assignee: NEC CORPORATION
- Current Assignee: NEC CORPORATION
- Current Assignee Address: JP Minato-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2013-134426 20130627
- International Application: PCT/JP2014/003247 WO 20140617
- International Announcement: WO2014/208050 WO 20141231
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/10 ; H01L27/24

Abstract:
To provide a switching element having excellent operational stability and a high production yield, and a semiconductor device using the switching element, a switching element according to this invention includes a non-volatile resistive-change element, a rectifying element, and an insulating material. The non-volatile resistive-change element includes a first electrode, a second electrode, and a non-volatile resistive-change layer provided between the first electrode and the second electrode. The rectifying element includes the second electrode, a third electrode, and a volatile resistive-change layer provided between the second electrode and the third electrode. The insulating material is provided at least on the side surface of the third electrode.
Public/Granted literature
Information query
IPC分类: