• Patent Title: Switching element, switching element manufacturing method, semiconductor device, and semiconductor device manufacturing method
  • Application No.: US14895017
    Application Date: 2014-06-17
  • Publication No.: US09893276B2
    Publication Date: 2018-02-13
  • Inventor: Naoki BannoMunehiro Tada
  • Applicant: NEC CORPORATION
  • Applicant Address: JP Minato-ku, Tokyo
  • Assignee: NEC CORPORATION
  • Current Assignee: NEC CORPORATION
  • Current Assignee Address: JP Minato-ku, Tokyo
  • Agency: Sughrue Mion, PLLC
  • Priority: JP2013-134426 20130627
  • International Application: PCT/JP2014/003247 WO 20140617
  • International Announcement: WO2014/208050 WO 20141231
  • Main IPC: H01L45/00
  • IPC: H01L45/00 H01L27/10 H01L27/24
Switching element, switching element manufacturing method, semiconductor device, and semiconductor device manufacturing method
Abstract:
To provide a switching element having excellent operational stability and a high production yield, and a semiconductor device using the switching element, a switching element according to this invention includes a non-volatile resistive-change element, a rectifying element, and an insulating material. The non-volatile resistive-change element includes a first electrode, a second electrode, and a non-volatile resistive-change layer provided between the first electrode and the second electrode. The rectifying element includes the second electrode, a third electrode, and a volatile resistive-change layer provided between the second electrode and the third electrode. The insulating material is provided at least on the side surface of the third electrode.
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