Invention Grant
- Patent Title: Barium strontium-titanium (BST) capacitor configuration method
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Application No.: US14964654Application Date: 2015-12-10
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Publication No.: US09899153B2Publication Date: 2018-02-20
- Inventor: Sylvain Charley
- Applicant: STMicroelectronics (Tours) SAS
- Applicant Address: FR Tours
- Assignee: STMicroelectronics (Tours) SAS
- Current Assignee: STMicroelectronics (Tours) SAS
- Current Assignee Address: FR Tours
- Agency: Gardere Wynne Sewell LLP
- Priority: FR1555716 20150622
- Main IPC: H01G7/06
- IPC: H01G7/06 ; G01R15/16 ; G05F5/00 ; H03H5/12 ; H03H7/01 ; H04B1/04

Abstract:
A capacitor has a variable capacitance settable by a bias voltage. A method for setting the bias voltage including the steps of: (a) injecting a constant current to bias the capacitor; (b) measuring the capacitor voltage at the end of a time interval; (c) calculating the capacitance value obtained at the end of the time interval; (d) comparing this value with a desired value; and (e) repeating steps (a) to (d) so as long as the calculated value is different from the set point value. When calculated value matches the set point value; the measured capacitor voltage is stored as a bias voltage to be applied to the capacitor for setting the variable capacitance.
Public/Granted literature
- US20160372266A1 BARIUM-STRONTIUM-TITANIUM (BST) CAPACITOR CONFIGURATION METHOD Public/Granted day:2016-12-22
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