Invention Grant
- Patent Title: Method for producing a semiconductor using a vacuum furnace
-
Application No.: US14253514Application Date: 2014-04-15
-
Publication No.: US09908282B2Publication Date: 2018-03-06
- Inventor: John Carberry
- Applicant: Mossey Creek Technologies Inc.
- Applicant Address: US TN Jefferson City
- Assignee: Mossey Creek Technologies, Inc.
- Current Assignee: Mossey Creek Technologies, Inc.
- Current Assignee Address: US TN Jefferson City
- Agency: Pitts & Lake, P.C.
- Main IPC: B29C51/36
- IPC: B29C51/36 ; H01L21/02 ; C30B11/00 ; C30B29/06 ; C30B29/64 ; H01L31/18

Abstract:
A method of manufacturing a semiconductor includes providing a mold defining a planar capillary space; placing a measure of precursor in fluid communication with the capillary space; creating a vacuum around the mold and within the planar capillary space; melting the precursor; allowing the melted precursor to flow into the capillary space; and cooling the melted precursor within the mold such that the precursor forms a semiconductor, the operations of melting the precursor, allowing the precursor to flow into the capillary space, and cooling the melted precursor occurring in the vacuum.
Public/Granted literature
- US20170103886A9 Method for Producing a Semiconductor Using a Vacuum Furnace Public/Granted day:2017-04-13
Information query