Invention Grant
- Patent Title: Resist underlayer film-forming composition and method for forming resist pattern using the same
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Application No.: US15305793Application Date: 2015-04-14
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Publication No.: US09910354B2Publication Date: 2018-03-06
- Inventor: Yasushi Sakaida , Tokio Nishita , Noriaki Fujitani , Rikimaru Sakamoto
- Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
- Applicant Address: JP Tokyo
- Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
- Current Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
- Current Assignee Address: JP Tokyo
- Agency: Oliff PLC
- Priority: JP2014-091782 20140425
- International Application: PCT/JP2015/061467 WO 20150414
- International Announcement: WO2015/163195 WO 20151029
- Main IPC: G03F7/11
- IPC: G03F7/11 ; G03F7/20 ; G03F7/26 ; C09D179/08 ; G03F7/004 ; G03F7/16 ; H01L21/308

Abstract:
A composition for forming a resist underlayer film which make possible to form a desired high-adhesion resist pattern. A resist underlayer film-forming composition for lithography containing a polymer having the following structure Formula (1) or (2) at a terminal of a polymer chain, crosslinker, compound promoting crosslinking reaction, and organic solvent. (wherein R1 is a C1-6 alkyl group optionally having a substituent, phenyl group, pyridyl group, halogeno group, or hydroxy group, R2 is a hydrogen atom, a C1-6 alkyl group, hydroxy group, halogeno group, or ester group of —C(═O)O—X wherein X is a C1-6 alkyl group optionally having a substituent, R3 is a hydrogen atom, a C1-6 alkyl group, hydroxy group, or halogeno group, R4 is a direct bond or divalent C1-8 organic group, R5 is a divalent C1-8 organic group, A is an aromatic ring or heteroaromatic ring, t is 0 or 1, and u is 1 or 2.)
Public/Granted literature
- US20170045820A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION AND METHOD FOR FORMING RESIST PATTERN USING THE SAME Public/Granted day:2017-02-16
Information query
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