Invention Grant
- Patent Title: Methods of forming dielectric films, new precursors and their use in semiconductor manufacturing
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Application No.: US15407913Application Date: 2017-01-17
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Publication No.: US09911590B2Publication Date: 2018-03-06
- Inventor: Christian Dussarrat , Nicolas Blasco , Audrey Pinchart , Christophe Lachaud
- Applicant: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- Applicant Address: FR Paris
- Assignee: L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- Current Assignee: L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude
- Current Assignee Address: FR Paris
- Agent Patricia E. McQueeney
- Priority: WOPCT/EP2006/062893 20060602
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/40 ; C23C16/30 ; C23C16/455
Abstract:
Method of deposition on a substrate of a dielectric film by introducing into a reaction chamber a vapor of a precursor selected from the group consisting of Zr(MeCp)(NMe2)3, Zr(EtCp)(NMe2)3, ZrCp(NMe2)3, Zr(MeCp)(NEtMe)3, Zr(EtCp)(NEtMe)3, ZrCp(NEtMe)3, Zr(MeCp)(NEt2)3, Zr(EtCp)(NEt2)3, ZrCp(NEt2)3, Zr(iPr2Cp)(NMe2)3, Zr(tBu2Cp)(NMe2)3, Hf(MeCp)(NMe2)3, Hf(EtCp)(NMe2)3, HfCp(NMe2)3, Hf(MeCp)(NEtMe)3, Hf(EtCp)(NEtMe)3, HfCp(NEtMe)3, Hf(MeCp)(NEt2)3, Hf(EtCp)(NEt2)3, HfCp(NEt2)3, Hf(iPr2Cp)(NMe2)3, Hf(tBu2Cp)(NMe2)3, and mixtures thereof; and depositing the dielectric film on the substrate.
Public/Granted literature
- US20170125242A1 METHODS OF FORMING DIELECTRIC FILMS, NEW PRECURSORS AND THEIR USE IN SEMICONDUCTOR MANUFACTURING Public/Granted day:2017-05-04
Information query
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