Invention Grant
- Patent Title: Method for making nanosheet CMOS device integrating atomic layer deposition process and replacement gate structure
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Application No.: US15254394Application Date: 2016-09-01
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Publication No.: US09911592B2Publication Date: 2018-03-06
- Inventor: Bruce B. Doris , Michael A. Guillorn , Isaac Lauer , Xin Miao
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66 ; H01L21/306 ; H01L29/06 ; H01L29/423 ; H01L29/775 ; H01L29/786
Abstract:
A semiconductor device including a gate structure present on at least two suspended channel structures, and a composite spacer present on sidewalls of the gate structure. The composite spacer may include a cladding spacer present along a cap portion of the gate structure, and an inner spacer along the channel portion of the gate structure between adjacent channel semiconductor layers of the suspended channel structures. The inner spacer may include a crescent shape with a substantially central seam.
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