Invention Grant
- Patent Title: Method of fabricating nanowire field effect transistor having a preplacement gate by using sacrificial etch layer
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Application No.: US15286679Application Date: 2016-10-06
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Publication No.: US09911599B2Publication Date: 2018-03-06
- Inventor: Richard Kenneth Oxland
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: F01L21/02
- IPC: F01L21/02 ; H01L21/02 ; H01L29/06 ; H01L29/10 ; H01L29/78 ; H01L29/66 ; B82Y10/00 ; B82Y40/00 ; H01L29/423 ; H01L29/775 ; H01L21/285 ; H01L29/165 ; H01L29/20 ; H01L29/205 ; H01L29/49 ; H01L29/51 ; H01L29/786 ; H01L29/16 ; H01L21/762 ; H01L27/088 ; H01L27/092 ; H01L27/108 ; H01L27/12 ; H01L29/417
Abstract:
A device includes a substrate, a buffer layer, a nanowire, a gate structure, and a remnant of a sacrificial layer. The buffer layer is above the substrate. The nanowire is above the buffer layer and includes a pair of source/drain regions and a channel region between the source/drain regions. The gate structure surrounds the channel region. The remnant of the sacrificial layer is between the buffer layer and the nanowire and includes a group III-V semiconductor material.
Public/Granted literature
- US20170025538A1 Nanowire Field Effect Transistor Device Having a Replacement Gate Public/Granted day:2017-01-26
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