Invention Grant
- Patent Title: Structure for die probing
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Application No.: US15455925Application Date: 2017-03-10
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Publication No.: US09911667B2Publication Date: 2018-03-06
- Inventor: Hsien-Wei Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/00 ; H01L25/10 ; H01L25/00 ; H01L23/538 ; H01L23/48 ; H01L23/31 ; H01L21/56 ; H01L25/065 ; H01L23/498 ; H01L23/522

Abstract:
A package includes a device die, which includes a metal pillar at a top surface of the device die, and a solder region on a sidewall of the metal pillar. A molding material encircles the device die, wherein a top surface of the molding material is substantially level with a top surface of the device die. A dielectric layer overlaps the molding material and the device die, with a bottom surface of the dielectric layer contacting a top surface of the device die and a top surface of the molding material. A redistribution line (RDL) extends into the dielectric layer to electrically couple to the metal pillar.
Public/Granted literature
- US20170186655A1 Structure for Die Probing Public/Granted day:2017-06-29
Information query
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