Invention Grant
- Patent Title: Film for back surface of flip-chip semiconductor
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Application No.: US13642325Application Date: 2011-04-18
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Publication No.: US09911683B2Publication Date: 2018-03-06
- Inventor: Naohide Takamoto , Goji Shiga
- Applicant: Naohide Takamoto , Goji Shiga
- Applicant Address: JP Ibaraki-shi, Osaka
- Assignee: NITTO DENKO CORPORATION
- Current Assignee: NITTO DENKO CORPORATION
- Current Assignee Address: JP Ibaraki-shi, Osaka
- Agency: Sughrue Mion, PLLC
- Priority: JP2010-096286 20100419; JP2010-096290 20100419; JP2010-096291 20100419; JP2010-096294 20100419
- International Application: PCT/JP2011/059557 WO 20110418
- International Announcement: WO2011/132647 WO 20111027
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/683 ; H01L21/50 ; H01L21/78 ; H01L23/00 ; H01L23/31 ; H01L23/544

Abstract:
The film for back surface of flip-chip semiconductor according to the present invention is a film for back surface of flip-chip semiconductor to be formed on a back surface of a semiconductor element having been flip-chip connected onto an adherend, wherein a tensile storage elastic modulus at 23° C. after thermal curing is 10 GPa or more and not more than 50 GPa. According to the film for back surface of flip-chip semiconductor of the present invention, since it is formed on the back surface of a semiconductor element having been flip-chip connected onto an adherend, it fulfills a function to protect the semiconductor element. In addition, since the film for back surface of flip-chip semiconductor according to the present invention has a tensile storage elastic modulus at 23° C. after thermal curing of 10 GPa or more, a warp of the semiconductor element generated at the time of flip-chip connection of a semiconductor element onto an adherend can be effectively suppressed or prevented.
Public/Granted literature
- US08896134B2 Film for back surface of flip-chip semiconductor Public/Granted day:2014-11-25
Information query
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