Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15226681Application Date: 2016-08-02
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Publication No.: US09911721B2Publication Date: 2018-03-06
- Inventor: Tatsuo Tonedachi
- Applicant: KABUSHIKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Patterson & Sheridan, LLP
- Priority: JP2016-012709 20160126
- Main IPC: H01L31/12
- IPC: H01L31/12 ; H01L25/16 ; H01L33/62 ; H01L31/16 ; H01L33/56 ; H01L33/06 ; H01L33/38

Abstract:
A semiconductor device includes a light emitting element comprising a substrate having a first and a second surface and an outer edge connecting the first and second surfaces. A light emitting layer is on a central portion of the first surface but not on a peripheral portion between the central portion and the outer edge of the substrate. A first insulating layer is disposed on the peripheral portion of the first surface, a side surface of the light emitting layer, and a third surface of the light emitting layer that is spaced from the first surface of the substrate. A first electrode is electrically contacting the third surface of the light emitting layer. A light receiving element is provided in a propagation path of light emitted from the light emitting element.
Public/Granted literature
- US20170213812A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-07-27
Information query
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